Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection
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This paper presents the design, fabrication and measurement results of a vertically moving, electrostatically actuated micromirror. The single crystalline silicon substrate allows the design of a symmetrical and mechanically stable mirror suspension while ...
For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo- multipliers. The proposal is to develop a novel photo- sensor, which is based on vertically integratin ...
This paper presents continuative results on the design, fabrication and measurements of a vertically moving, electrostatically actuated micromirror, first shown at the IEEE MEMS 2007 [N. Quack, I. Züst, S. Blunier, J. Dual, M. Arnold, F. Felder, M. Rahim, ...
We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal–oxide–semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring of p-well around the p+ anod ...
This project has demonstrated the feasibility of a low-cost Earth sensor based on imaging oxygen airglow, allowing 0.4° accuracy from GEO under any illumination condition. Available Earth Sensor (ES) are based on the measurement of the earth’s infrared rad ...
Current digital camera sensors are inherently sensitive to the near-infrared part of the spectrum. To prevent the near-IR contamination of images, an IR blocking filter (hot mirror) is placed in front of the sensor. In this work, we start by replacing the ...
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...
A record 730 nm parametric conversion in silica fiber from the near-infrared to the short-wave infrared band is reported and analyzed. A parametric gain in excess of 30 dB was measured for a signal at 1300 nm (with corresponding idler at 2030 nm). This con ...