Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
In this work, we report thermoelectric measurements on electroplated bismuth telluride nanowires. Porous polycarbonate membranes, obtained by ion-track irradiation lithography, were chosen as electroplating templates. Bismuth telluride nanowires were achie ...
The magnetoresistance (MR) of magnetic multilayers formed by electrodeposition of Co and Cu in the parallel pores of nanoporous polycarbonate membranes was measured in the current-perpendicular-to-plane (CPP-MR) geometry, with Co acid Cu thicknesses in the ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
Europe is currently making a great effort in order to improve the sustainability and reduce the environmental impact of its energy and transportation systems. A key role on these initiatives is played by efficient generation systems, like cogeneration, and ...
We have developed a novel batch-type technology for making three-dimensional (3-D) millimeter-sized transformers for ultrasmall low-power (0.1 to 1 Watt) applications. The technology uses the 3-D micropatterning of ferrite wafers by powder blasting to form ...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...
Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...
