Publication

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Related publications (32)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Material Development for Perovskite/Silicon Tandem Photovoltaics

Peter Joseph Fiala

The developed world is built on the fact that energy is readily available and functionally infinite. The electricity from the wall, the gas at the station, and the heat in our homes are reliable and low-cost. But this comfort is so far only possible throug ...

EPFL2022

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Crystalline Silicon (c-Si) solar cells are dominating the photovoltaic (PV) market. Owing to their large manufacturing capacity, reliability and efficiency, c-Si solar cells are now cost-competitive with other non-renewable electricity sources in many plac ...

EPFL2020

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

2018

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

, , , , , , , ,

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017

Back-contact silicon heterojunction solar cells with an efficiency of 22% were manufactured, featuring a simple aluminium metallisation directly on the doped amorphous silicon films. Both the open-circuit voltage and the fill factor heavily depend on the p ...

Iop Publishing Ltd2017

, , ,

Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energ ...

American Institute of Physics2016