Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates
Related publications (108)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
We present a novel method for the fabrication of well-ordered, two-dimensional nanocluster arrays. The method is based on the confined nucleation of adatoms within the superstructure cells of periodic surface dislocation networks, which form in many hetero ...
The kinetics of surface processes during the growth of GaN by molecular-beam epitaxy (MBE) with ammonia as the source of reactive nitrogen is studied theoretically and experimentally. A model of surface processes is developed taking into account specific e ...
When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al c ...
We present a comparison between the predictions of two theoretical models and experimental results on ultrathin GaAs layers with a thickness in the range from 1 to 8 ML embedded in bulk (AlxGa1-x)As, 0.30 less than or equal to x less than or equal to 0.34. ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the e ...