Exciton dynamics in semiconductor confined systems
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A clear signature of enhanced backscattering of excitons is observed in the directional resonant Rayleigh scattering of light from localized two-dimensional excitons in disordered quantum wells. Its spectral dependence and time dynamics are measured and th ...
We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to tha ...
Angular-dependent emission spectra are investigated in a strongly coupled InGaAs-GaAs-AlAs-based semiconductor microcavity as a function of excitation intensity and of detuning between the uncoupled exciton and photon modes. Under conditions of nonresonant ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
We engineer a semiconductor microcavity through an appropriate choice of geometry and materials in order to maximise the exciton-photon coupling. The polaritonic nonlinearities in such devices survive at high temperatures and high excitation densities. We ...
The influence of hydrostatic pressure on the emission and absorption spectra measured for various types of InGaN structures (epilayers, quantum wells, and quantum dots) is studied. While the known pressure coefficients of the GaN and InN band gaps are abou ...
Using time-resolved photoluminescence, we have investigated the radiative behavior of neutral and negatively charged excitons in CdTe-based quantum wells. We find that the photoluminescence of negatively charged excitons can be well reproduced by a model o ...
Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap an ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g factor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T. This has been caused by a rever ...
