Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

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Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Federico Matteini

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Eleonora Russo, Sonia Conesa Boj, Anna Dalmau Mallorquí, Heidi Andrea Potts, Jelena Vukajlovic Plestina

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Efficient Multiterminal Spectrum Splitting via a Nanowire Array Solar Cell

Anna Fontcuberta i Morral, Esther Alarcon Llado

Nanowire-based solar cells opened a new avenue for increasing conversion efficiency and rationalizing material use by growing different III-V materials on silicon substrates. Here, we propose a multiterminal nanowire solar cell design with a theoretical co ...

Amer Chemical Soc2015

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Gözde Tütüncüoglu

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Nicolas Tétreault, Thomas Moehl, Aravind Kumar Chandiran, Hauke Arne Harms, Philippe Pierre Labouchère

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbo ...

Wiley-VCH Verlag Berlin2014

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Martin Heiss, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Anna Dalmau Mallorquí

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Self-assembled quantum dots in a nanowire system for quantum photonics

Anna Fontcuberta i Morral, Nicola Marzari, Marco Cantoni, Martin Heiss, Sonia Conesa Boj, Eleonora Russo, Yannik Fontana, Bernt Ketterer

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

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