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Visible-near-middle infrared spanning supercontinuum generation in a silicon nitride (Si3N4) waveguide

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Tobias Kippenberg, Junqiu Liu, Wenle Weng
2019
journal articles

Abstract

We demonstrate the generation of a supercontinuum spanning more than 1.5 octaves over the 1.2-3.7 mu m range in a silicon nitride waveguide using sub-40-fs pulses at 2.35 mu m generated by a 75 MHz Kerr-lens mode-locked Cr:ZnS laser. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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https://infoscience.epfl.ch/entities/publication/52f76b48-f178-426f-a75f-2cb69c403a79

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Related concepts (7)

Silicon nitride

Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si3N4 (Trisilicon tetranitride) is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ′′Silicon nitride′′ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H3PO4. It is very hard (8.5 on the mohs scale). It has a high thermal stability with strong optical nonlinearities for all-optical applications.

Silicon photonics

Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).

In chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics.

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