Silicon nitride | EPFL Graph Search

Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si3N4 (Trisilicon tetranitride) is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H3PO4. It is very hard (8.5 on the mohs scale). It has a high thermal stability with strong optical nonlinearities for all-optical applications. Production Silicon nitride is prepared by heating powdered silicon between 1300 °C and 1400 °C in a nitrogen atmosphere: :3 Si + 2 N2 → Si3N4 The silicon sample weight increases progressively due to the chemical combination of silicon and nitrogen. Without an iron catalyst, the reaction is complete after several hours (~7), when no further weight increase due to nitrogen absorption (per gram of silicon) is detected. In addition to Si3N4, sev

Interface Investigations on Titanium Nitride Bilayer Systems

Dominik Anwar Jaeger

Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride (TiN) grains surrounded by a one to two monolayer thick interlayer of silicon nitride (Si3N4) show an enhanced nanohardness. The central theme of this thesis is concernedwith the interfacial properties of two-dimensional bilayer systems, which are used as model systems to describe the interfaces occurring in nanocomposite coatings. The systems under investigation are TiN interfaces in contact with silicon (Si), silicon nitride (Si3N4) and aluminum nitride (AlN). The primary tool used to analyze the interfaces of bilayer systems is X-ray Photoelectron Spectroscopy (XPS) with emphasis put on the shake-up feature of the Ti 2p photoelectron line. Shake-ups in TiN are observed as an additional peak on the lower binding energy side of the energy lines of the Ti 2p orbitals. Shake-ups are strongly influenced by valence electrons and electron density distributions. This makes them a powerful tool to probe the chemical and electronic structure of TiN interfaces. The aim of this study is to utilize the shake-up energy and its intensity to gain insight into interfacial structures and correlate their changes to interfacial polarization and macroscopic mechanical properties. Single crystalline (sc-) and oxygen-free TiN as well as oxygen-free bilayer systems were deposited by unbalanced magnetron sputtering and analyzed by Angle Resolved (AR-)XPS. Bilayer samples were deposited and their quality was controlled using X-ray diffraction (crystallinity), Rutherford back scattering (elemental composition), and atomic force microscopy (roughness). All XPS samples were fabricated, transfered and analyzed whilst maintaining ultra high vacuum. A precise and self-consistent XPS data processing method was developed to evaluate Ti 2p spectra. This method accounts for the correct photoelectron line shape, background subtraction and photoelectron peak area intensity. Binding energy, shake-up energy and intensity ratios of shake-ups taken frompristine TiN surfaces are precisely determined, and the influence of oxygen on the information content in peak positions and intensities was investigated. The shake-up energy and intensity of bulk sc-TiN and its origin of the shake-up are discussed. An analytical description for the XPS signal ratio of bilayer systems is derived to separate the interfacial signals from the bulk information. The results obtained by this analytical description are strongly influenced by the interface thickness that has been found to be proportional to the overlayer thickness. The revealed interface properties show a correlation between the shake-up intensity and the interface morphology, oxygen content, overlayer material and overlayer thickness. AR-XPS and X-ray Photoelectron Diffraction (XPD) results were used to interpret the crystalline structure of the different TiN/AlN and TiN/Si3N4 bilayer systems. AlN shows XPD patterns indicating a crystalline growth of AlN on sc-TiN. The electrically insulating AlN overlayer creates a charge accumulation at the TiN interface, which results in an enhanced shake-up intensity. XPD patterns of Si3N4 systems revealed a crystalline growth of Si3N4 in the first 0.6nm. The intensity of the diffraction patterns reduces with increasing Si3N4 overlayer thickness due to a change in the growth behavior from crystalline to amorphous structures. Si3N4 films show, in comparison to AlN, reduced interface charging and hence a lower shakeup intensity. The crystalline growth of Si3N4 in the initial stages is hindered in systems where a bias voltage is applied to the substrate during the deposition process. In contrast to the unbiased systems, which have crystalline interfacial structures, the biased systems no longer show XPD patterns due to a loss of crystallinity. Additionally the shake-up intensity of biased systems is thickness-independent, which is in contrast to unbiased systems. The difference in the shake-up intensity of biased and unbiased Si3N4 is explained by a different band gap of the Si3N4 structure in the first two monolayers. This thesis shows that the increase in the shake-up intensity is correlated to intrinsic and extrinsic interface charging. The obtained results, in combination with theoretical structure models from literature, show that in one to two monolayer thick interlayers a build-up of interface polarization is unlikely. The observed nanohardness enhancement in TiN/Si3N4 systems is explained with already known hardness effects.

EPFL2012

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of the optomechanical interaction, we need to be in the "backaction-dominated" regime, where we can study the limits of quantum measurement and how to circumvent them. To create a system which can enter the quantum regime, the optomechanical transducer has to satisfy certain criteria. A quantum-enabled optomechanical system consists of an optical cavity and a mechanical resonator with ultra low quantum decoherence, which are strongly coupled to each other via the optomechanical interaction.High stress silicon nitride has enabled nanomechanical resonators with exceptionally low dissipation at room temperature via several soft-clamping techniques. Achieving high optomechanical coupling to these coherent nanobeams results in high optomechanical cooperativities, thus alleviating the thermal motion barrier for room temperature quantum optomechanics. Monolithic integration of high-Q nanobeam resonators with optical cavities has been limited to doubly-clamped nanobeams due to the complexity of the device fabrication and long device sizes required for conventional soft-clamping using phononic crystals. In addition, the previous demonstrations of such systems showed limited optomechanical couplings thus a limited single photon cooperativity.I present the design, fabrication and characterization of three different classes of nanomechanical resonators clamp-tapered, fractal-like, and polygon resonators, which support perimeter modes, with Q factors exceeding 3 billion at room temperature and their optical readout using an integrated nearfield nano-optomechanical transducer using high stress silicon nitride. Our transducer features a one-dimensional Fabry-Perot optical cavity integrated with a high-Q nanomechanical resonator. The Fabry-Perot optical cavity is formed by patterning two photonic crystal reflectors on a silicon nitride waveguide designed for high-Q optical modes. Our approach allows individual optimization of optical and mechanical resonators, while maintaining a high optomechanical coupling rate due to large optomechanical mode overlap. Our best performing devices show on-chip optomechanical transducers with single photon cooperativities as high as 123 with mechanical quality factor of 120 million at room temperature. The developed system is of great interest to the optomechanics and sensing community. In quantum optomechanics, it will serve as a platform for quantum feedback control of the nanomechanical resonators to achieve motional ground state of a macroscopic resonator and generation of squeezed light at room temperature. Owing to their record value mechanical quality factors, the room temperature force sensitivity of our highest Q perimeter modes is on par with atomic force microscopy cantilevers at millikelvin temperature.Complete documentation of a nanofabrication process is the key to its reproducibility. Process-specific details of the fabrication techniques are usually missing in journal publications. To bridge this gap, I developed NanoFab-net.org. An online open-access tool that allows sharing process-specific fabrication reports, extracting the metadata and obtaining a unique digital object identifier (DOI) for each report.

EPFL2022

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling

Camille Sophie Brès, Edgars Nitiss, Anton Stroganov, Boris Zabelich

Stoichiometric silicon nitride (Si3N4) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not available in Si3N4, limiting its use for multiple classical and quantum applications. In this work, we implement thermally assisted electric-field poling, which allows charge carrier separation in the waveguide core, leading to a depletion zone formation and the inscription of a strong electric field reaching 20 V/mu m. The latter results in an effective second-order susceptibility (chi((2))) inside the Si3N4 waveguide, making linear electro-optic modulation accessible on the platform for the first time. We develop a numerical model for simulating the poling process inside the waveguide and use it to calculate the diffusion coefficient and the concentration of the charge carriers responsible for the field formation. The charge carrier concentration, as well as the waveguide core size, is found to play a significant role in determining the achievable effective nonlinearity experienced by the optical mode inside the waveguide. Current findings establish a strong groundwork for further advancement of chi((2))-based devices on Si3N4.