This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (
Camille Sophie Brès, Anton Stroganov, Boris Zabelich, Christian André Clément Lafforgue, Edgars Nitiss
Kirsten Emilie Moselund, Chang Won Lee
Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang