Phase transitions, anisotropy and domain engineering
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A large body of work has been reported in the last 5 years on the development of lead-free piezoceramics in the quest to replace lead–zirconate–titanate (PZT) as the main material for electromechanical devices such as actuators, sensors, and transducers. I ...
The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...
The production of lead zirconate titanate (PZT) with a variation in Zr and Ti ratios using a hydrothermal method has been attempted. We show that when reactions are conducted at 160 degrees C, for 4 h, the phase of PZT produced is independent of the initia ...
We use femtosecond x-ray diffraction to probe directly the structural dynamics of a charge ordered and orbitally ordered thin film of La0.42Ca0.58MnO3 initiated by an ultrafast optical pulse. At low excitation fluences we observe the displacive excitation ...
New ionic liquid crystals (including ionic metallomesogens) based on the pyrrolidinium core are presented. N-Methylpyrrolidine was quaternized with different mesogenic groups connected to a flexible, ω-bromosubstituted alkyl spacer. The length of the flexi ...
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...
Research on lead-free piezoceramics has dramatically increased over the last years due to stringent legislation demanding to phase out current lead- containing piezoceramics. The use of electrostrictive materials for electric-field induced strain has been ...
The problem of the choice of the order parameter of the Landau expansion of proper ferroelectrics is discussed. The expansion with respect to the (i) electric displacement, (ii) polarization, (iii) ferroelectric contribution to the polarization, (iv) "orde ...
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...
This review discusses recent advances in understanding origins of large piezoelectric properties in some ferroelectric materials. In particular, it addresses the role of polarization rotation and monoclinic phases. It is suggested that the polarization rot ...
