Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Etching (microfabrication)Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride.
GalliumGallium is a chemical element with the symbol Ga and atomic number 31. Discovered by the French chemist Paul-Émile Lecoq de Boisbaudran in 1875, gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminium, indium, and thallium). Elemental gallium is a relatively soft, silvery metal at standard temperature and pressure. In its liquid state, it becomes silvery white. If enough force is applied, solid gallium may fracture conchoidally.
Space weatheringSpace weathering is the type of weathering that occurs to any object exposed to the harsh environment of outer space. Bodies without atmospheres (including the Moon, Mercury, the asteroids, comets, and most of the moons of other planets) take on many weathering processes: collisions of galactic cosmic rays and solar cosmic rays, irradiation, implantation, and sputtering from solar wind particles, and bombardment by different sizes of meteorites and micrometeorites.
WeatheringWeathering is the deterioration of rocks, soils and minerals as well as wood and artificial materials through contact with water, atmospheric gases, and biological organisms. Weathering occurs in situ (on-site, with little or no movement), and so is distinct from erosion, which involves the transport of rocks and minerals by agents such as water, ice, snow, wind, waves and gravity. Weathering processes are divided into physical and chemical weathering.
MetamorphismMetamorphism is the transformation of existing rock (the protolith) to rock with a different mineral composition or texture. Metamorphism takes place at temperatures in excess of , and often also at elevated pressure or in the presence of chemically active fluids, but the rock remains mostly solid during the transformation. Metamorphism is distinct from weathering or diagenesis, which are changes that take place at or just beneath Earth's surface. Various forms of metamorphism exist, including regional, contact, hydrothermal, shock, and dynamic metamorphism.
Extreme ultraviolet lithographyExtreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
