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An LCD tachistoscope with submillisecond precision

Related publications (32)

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

MEMS-based Tunable Metasurface for Reflective Display Applications

Dorian Giraud Herle

In an era where portable electronic devices are indispensable for a wide range of activities, the need for displays that provide both long-lasting battery life and excellent visibility in different lighting conditions is increasingly important. Emissive di ...

EPFL2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Johann Nicolaï Stachurski

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

EPFL2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Giulia Tagliabue, Alan Richard Bowman, Fateme Kiani Shahvandi, Jiaming Ma

This dataset accompanies the publication "Best practices in measuring absorption at the macro- and microscale" published in APL Photonics. The data can be used to reproduce original plots in figures 1-4 in the main text and all original plots in the suppor ...

Zenodo2024

Symmetry-Induced Singlet-Triplet Inversions in Non-Alternant Hydrocarbons

Anne-Clémence Corminboeuf, Jacob Terence Blaskovits, Marc Hamilton Folkmann Garner

Molecules with inversion of the singlet and triplet excited-state energies are highly promising for the development of organic light-emitting diodes (OLEDs). To date, azaphenalenes are the only class of molecules where these inversions have been identified ...

Wiley-VCH Verlag GmbH2023

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Camilla Arietta Vael-Garn

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

An LCD tachistoscope with submillisecond precision

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

MEMS-based Tunable Metasurface for Reflective Display Applications

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Symmetry-Induced Singlet-Triplet Inversions in Non-Alternant Hydrocarbons

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

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Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

MEMS-based Tunable Metasurface for Reflective Display Applications

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Symmetry-Induced Singlet-Triplet Inversions in Non-Alternant Hydrocarbons

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells