FerroelectricityFerroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. All ferroelectrics are also piezoelectric and pyroelectric, with the additional property that their natural electrical polarization is reversible. The term is used in analogy to ferromagnetism, in which a material exhibits a permanent magnetic moment. Ferromagnetism was already known when ferroelectricity was discovered in 1920 in Rochelle salt by Joseph Valasek.
PiezoelectricityPiezoelectricity (ˌpiːzoʊ-,_ˌpiːtsoʊ-,_paɪˌiːzoʊ-, piˌeɪzoʊ-,_piˌeɪtsoʊ-) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word piezoelectricity means electricity resulting from pressure and latent heat. It is derived (an ancient source of electric current). The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry.
Non-volatile memoryNon-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Demagnetizing fieldThe demagnetizing field, also called the stray field (outside the magnet), is the magnetic field (H-field) generated by the magnetization in a magnet. The total magnetic field in a region containing magnets is the sum of the demagnetizing fields of the magnets and the magnetic field due to any free currents or displacement currents. The term demagnetizing field reflects its tendency to act on the magnetization so as to reduce the total magnetic moment.
Elastic modulusAn elastic modulus (also known as modulus of elasticity) is the unit of measurement of an object's or substance's resistance to being deformed elastically (i.e., non-permanently) when a stress is applied to it. The elastic modulus of an object is defined as the slope of its stress–strain curve in the elastic deformation region: A stiffer material will have a higher elastic modulus. An elastic modulus has the form: where stress is the force causing the deformation divided by the area to which the force is applied and strain is the ratio of the change in some parameter caused by the deformation to the original value of the parameter.
ElectromechanicsIn engineering, electromechanics combines processes and procedures drawn from electrical engineering and mechanical engineering. Electromechanics focuses on the interaction of electrical and mechanical systems as a whole and how the two systems interact with each other. This process is especially prominent in systems such as those of DC or AC rotating electrical machines which can be designed and operated to generate power from a mechanical process (generator) or used to power a mechanical effect (motor).
HysteresisHysteresis is the dependence of the state of a system on its history. For example, a magnet may have more than one possible magnetic moment in a given magnetic field, depending on how the field changed in the past. Plots of a single component of the moment often form a loop or hysteresis curve, where there are different values of one variable depending on the direction of change of another variable. This history dependence is the basis of memory in a hard disk drive and the remanence that retains a record of the Earth's magnetic field magnitude in the past.
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
Domain wall (magnetism)A domain wall is a term used in physics which can have similar meanings in magnetism, optics, or string theory. These phenomena can all be generically described as topological solitons which occur whenever a discrete symmetry is spontaneously broken. In magnetism, a domain wall is an interface separating magnetic domains. It is a transition between different magnetic moments and usually undergoes an angular displacement of 90° or 180°. A domain wall is a gradual reorientation of individual moments across a finite distance.
DielectricIn electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation.
