Negative differential conduction in the Bloch oscillations regime in the hexagonal silicon carbide polytypes 4H, 6H and 8H
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...
The effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20 nm are deposited on oxygen-terminated diamond a ...
The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire < 111 > growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of b ...
