PyroelectricityPyroelectricity (from the two Greek words pyr meaning fire, and electricity) is a property of certain crystals which are naturally electrically polarized and as a result contain large electric fields. Pyroelectricity can be described as the ability of certain materials to generate a temporary voltage when they are heated or cooled. The change in temperature modifies the positions of the atoms slightly within the crystal structure, so that the polarization of the material changes.
Static electricityStatic electricity is an imbalance of electric charges within or on the surface of a material or between materials. The charge remains until it is able to move away by means of an electric current or electrical discharge. Static electricity is named in contrast with current electricity, where the electric charge flows through an electrical conductor or space, and transmits energy. A static electric charge can be created whenever two surfaces contact and or slide against each other and then separated.
Electrolytic capacitorAn electrolytic capacitor is a polarized capacitor whose anode or positive plate is made of a metal that forms an insulating oxide layer through anodization. This oxide layer acts as the dielectric of the capacitor. A solid, liquid, or gel electrolyte covers the surface of this oxide layer, serving as the cathode or negative plate of the capacitor. Because of their very thin dielectric oxide layer and enlarged anode surface, electrolytic capacitors have a much higher capacitance-voltage (CV) product per unit volume than ceramic capacitors or film capacitors, and so can have large capacitance values.
Barium titanateBarium titanate (BTO) is an inorganic compound with chemical formula BaTiO3. Barium titanate appears white as a powder and is transparent when prepared as large crystals. It is a ferroelectric, pyroelectric, and piezoelectric ceramic material that exhibits the photorefractive effect. It is used in capacitors, electromechanical transducers and nonlinear optics. Perovskite (structure) The solid exists in one of four polymorphs depending on temperature.
Dielectric strengthIn physics, the term dielectric strength has the following meanings: for a pure electrically insulating material, the maximum electric field that the material can withstand under ideal conditions without undergoing electrical breakdown and becoming electrically conductive (i.e. without failure of its insulating properties). For a specific piece of dielectric material and location of electrodes, the minimum applied electric field (i.e. the applied voltage divided by electrode separation distance) that results in breakdown.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
PermittivityIn electromagnetism, the absolute permittivity, often simply called permittivity and denoted by the Greek letter ε (epsilon), is a measure of the electric polarizability of a dielectric. A material with high permittivity polarizes more in response to an applied electric field than a material with low permittivity, thereby storing more energy in the material. In electrostatics, the permittivity plays an important role in determining the capacitance of a capacitor.
Non-volatile memoryNon-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Vacuum permittivityVacuum permittivity, commonly denoted ε0 (pronounced "epsilon nought" or "epsilon zero"), is the value of the absolute dielectric permittivity of classical vacuum. It may also be referred to as the permittivity of free space, the electric constant, or the distributed capacitance of the vacuum. It is an ideal (baseline) physical constant. Its CODATA value is: (farads per meter), with a relative uncertainty of It is a measure of how dense of an electric field is "permitted" to form in response to electric charges and relates the units for electric charge to mechanical quantities such as length and force.
HysteresisHysteresis is the dependence of the state of a system on its history. For example, a magnet may have more than one possible magnetic moment in a given magnetic field, depending on how the field changed in the past. Plots of a single component of the moment often form a loop or hysteresis curve, where there are different values of one variable depending on the direction of change of another variable. This history dependence is the basis of memory in a hard disk drive and the remanence that retains a record of the Earth's magnetic field magnitude in the past.
