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High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its application in field-effect transistors. However, strong Fermi level pinning (FLP) has been observed for contacts betwee ...
We present recent results obtained with a novel spectrometer developed within the EU project VOLPE (VOLume PhotoEmission from solids with synchrotron radiation), now operational at ESRF (Beamline ID 16), where we were able to achieve high energy resolution ...
This study reports the significant mechanistic difference between binary-oxide antibacterial films with the same composition but different microstructures. Binary TiO2-FeOx films were found to present a faster bacterial inactivation kinetics under visible ...
As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation ele ...
We have simulated short channel carbon nanotube field-effect transistors with asymmetric source and drain contacts using a Coupled mode space approach within the non-equilibrium Green's function framework. The simulated results show that the asymmetric con ...
The instrument VOLPE (volume photoemission from solids) is an experimental setup dedicated to high energy photoemission (PE) experiments. The instrument is equipped with an electrostatic hemispherical spectrometer especially designed to analyze high energy ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
