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Delta-sigma loop based on charge pumping in SOI optical sensor

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Maher Kayal, Jean-Michel Sallese, Louis Harik
2008

Abstract

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.

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https://infoscience.epfl.ch/entities/publication/926f9499-1ae2-4d12-89bf-f5c92f655716

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