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Mg doping for p-type AlInN lattice-matched to GaN

Related publications (31)

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In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

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Ieee-Inst Electrical Electronics Engineers Inc2024

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Mg doping for p-type AlInN lattice-matched to GaN

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Semiconductor-based device architectures in multimaterial fibers

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

GeSn as next-generation material for short-wave infrared single-photon detection

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Semiconductor-based device architectures in multimaterial fibers

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

GeSn as next-generation material for short-wave infrared single-photon detection

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures