Publication

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

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A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

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Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

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This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

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Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

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This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

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The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

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Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

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