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Publications associées (30)

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Stability Analysis of Second-Order Harmonic Active Filters for Input-Series/Output- Parallel Solid State Transformers

Drazen Dujic, Andrea Cervone, Tianyu Wei

Solid-State Transformers with Input-Series/Output- Parallel configuration offer a convenient solution for AC/DC power conversion, thanks to their modularity, scalability and flexibility. However, as known, they are affected by a second-order harmonic rippl ...

2024

Maintenance and optimization of the TCV power supply

Damien Fasel, Ugo Siravo, Jérémie Dubray

The TCV tokamak is powered by a flywheel generator to supply the magnetic coils and the auxiliary heating systems. The generator has just undergone its fourth major overhaul to make it ready for the next ten years, after more than thirty years of almost tr ...

Elsevier Science Sa2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang, Chen Yang

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Pseudo-Three-Dimensional Analytical Model of Linear Induction Motors for High-Speed Applications

Mario Paolone, André Hodder, Lucien André Félicien Pierrejean, Simone Rametti

Literature on linear induction motors (LIMs) has proposed several approaches to model the behavior of such devices for different applications. In terms of accuracy and fidelity, field analysis-based models are the most relevant. Closed-form or numerical so ...

2024

Power Aware Placement of On-Chip Voltage Regulators

Rassul Bairamkulov

In traditional power delivery networks, the on-chip supply voltage is provided by board-level converters. Due to the significant distance between the converter and the load, variations in the load current are not effectively managed, producing a significan ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A modular multiple frequency inductive link to wirelessly power multiple miniaturized implants

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

A modular multiple frequency coils inductive link system to wirelessly provide power for at least a medical implant at an output of a receiving coil, whereby the receiving coil is configured to be implanted in an organism. The modular multiple frequency co ...

2024

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Mohammad Khaja Nazeeruddin, Yong Ding, Bin Ding, Cheng Liu, Jian Xu

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

Nature Portfolio2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

Kyojin Choo, Li Xu, Yimai Peng

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

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