Concept

Transistor bipolaire à grille isolée

Publications associées (189)

Compact Modeling of Thermal Noise in the MOS Transistor

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

Electrical characterization and modelling of lateral DMOS transistor

With the work reported in this manuscript we have essentially contributed to the electrical characterization and modelling of high voltage MOSFETs, more particularly DMOS architectures such as X-DMOS and L-DMOS able to sustain voltages ranging from 30V to ...

EPFL2005

Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

Carlotta Guiducci

Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...

2003

The design of an ECRH system for JET-EP

Timothy Goodman, Stefano Alberti, Hartmut Zohm

An electron cyclotron resonance heating (ECRH) system has been designed for JET in the framework of the JET enhanced performance project (JET-EP) under the European fusion development agreement. Due to financial constraints it has been decided not to imple ...

2003

Method of forming an electric charge in a body of a semiconductor component

Serguei Okhonin

The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band ...

2003

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

Mihai Adrian Ionescu, Philippe Renaud, Michel Declercq, Cyrille Hibert, Philippe Flückiger, Vincent Pott, Georges-André Racine, Raphaël Fritschi

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversio ...

2002

Analytical analysis of Quasi-Saturation Effect in PT and NPT IGBTs

Alfred Rufer

During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...

2002

Electrochemical promotion of catalysis

Christos Comninellis, György Foti, Justyna Eaves, Ivan Bolzonella

A review with refs. concerning electrochem. promotion of catalysis is presented. Recent progress made in our lab. in the field of electrochem. promotion of heterogeneous catalytic gas reactions is presented. The phenomenon consists of non-Faradaic modifica ...

2002

Importance of Quasi-Saturation Effect in the Bipolar Junction of High Voltage NPT- IGBTs for power calculations

Alfred Rufer

During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...

2001

Thermally isolated MOSFET for gas sensing application

Nico de Rooij, Danick Briand

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...

2001

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