Concept

Lithographie à faisceau d'électrons

Publications associées (446)

Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged a ...

2018

Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing

Matthieu Jean Michel Rüegg, Cheng Wang, Nolan Lassaline

The fabrication of high-performance solid-state silicon quantum-devices requires high resolution patterning with minimal substrate damage. We have fabricated room temperature (RT) single-electron transistors (SETs) based on point-contact tunnel junctions u ...

2018

High power modular LED-based illumination system for lithography applications

Hans Peter Herzig, Marcel Groccia, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

Mask-aligner lithography is a technology used to transfer patterns with critical dimensions in the micrometer range from below 1 micron for contact printing to a dozen of microns in proximity printing. This technology is widely used in the fabrication of M ...

2018

meV Resolution in Laser-Assisted Energy-Filtered Transmission Electron Microscopy

Fabrizio Carbone, Giovanni Maria Vanacore, Ivan Madan, Enrico Pomarico, Gabriele Berruto, Ido Kaminer, Kangpeng Wang

The electronic, optical, and magnetic properties of quantum solids are determined by their low-energy (

2018

High-power modular LED-based illumination systems for mask-aligner lithography

Hans Peter Herzig, Toralf Scharf, Johana Bernasconi

Mask-aligner lithography is traditionally performed using mercury arc lamps with wavelengths ranging from 250 nm to 600 nm with intensity peaks at the i, g and h lines. Since mercury arc lamps present several disadvantages, it is of interest to replace the ...

2018

Parasitic Oscillations in Smooth-Wall Circular Symmetric Gyrotron Beam Ducts

Stefano Alberti, Minh Quang Tran, Jean-Philippe Hogge, Jérémy Genoud, Trach-Minh Tran, Konstantinos Avramidis

In order to study parasitic oscillation that may occur in a realistic beam duct upstream to the gyrotron cavity, the self-consistent linear and spectral code TWANGlinspec has been modified. The large inhomogeneities in the smooth-wall beam duct geometry or ...

2018

High power ultraviolet LED illumination systems: coherence properties and applications in photolithography

Johana Bernasconi

Mask-aligner photolithography is a technology used to replicate patterns from a mask to a photosensitive substrate. It is widely used in the fabrication of MEMS and micro-optical components, and for other applications with dimensions in the micrometer rang ...

EPFL2018

Edge-contacted graphene with slope engineering by stencil lithography

Farzad Rezaeianaran

One approach to overcome the high contact resistance between 3D metals and 2D materials/heterostructures is employing edge contacts [1]. A low-resistance edge contact on boron nitride/graphene/boron nitride heterostructure using photolithography has been d ...

2018

Effects of Kr and Xe ion irradiation on the structure of Y2O3 nanoprecipitates in YBCO thin film conductors

Philippe Buffat, Elena Suvorova Buffat

The response of Y2O3 nanoprecipitates in a 1-mu m YBa2Cu3O7-x layer from a superconducting wire Ag/YBCO/buffer metal oxides/Hastelloy to 107 MeV Kr and 167 MeV Xe ion irradiation was investigated using a combination of transmission electron microscopy, dif ...

2018

Accurate Profile Measurement of the low Intensity Secondary Beams in the CERN Experimental Areas

Inaki Ortega Ruiz

The CERN accelerators deliver a wide spectrum of secondary beams to the Experimental Areas. These beams are composed of hadrons, leptons, and heavy ions that can vary greatly in momentum (1 GeV/c to 400 GeV/c) and intensity (10^2 to 10^8 particles per seco ...

EPFL2018

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