Concept

Ellipsométrie

Publications associées (72)

Spectral reflection and dot surface prediction models for color halftone prints

Roger Hersch, Patrick Emmel, Frédérique Crété

The proposed new spectral reflection model enhances the classical Clapper-Yule model by taking into account the fact that proportionally more incident light through a given colorant surface is reflected back onto the same colorant surface than onto other c ...

2005

Uniform magnetic properties for an ultrahigh-density lattice of noninteracting Co nanostructures

Harald Brune, Stefano Rusponi, Nicolas Weiss

We report on the magnetic properties of two-dimensional Co nanoparticles arranged in macroscopically phase-coherent superlattices created by self-assembly on Au(788). Our particles have a density of 26 Tera/in(2) (1 Tera=10(12)), are monodomain, and have u ...

2005

Jones vector imaging by use of digital holography: simulation and experimentation

Christian Depeursinge, Tristan Colomb, Etienne Cuche, Frédéric Montfort, Pierre Marquet

We present a method to image Jones vector by use of digital holography. We demonstrate that with a single hologram acquisition, the method allows to image and to calculate Jones vector and derive the polarization parameters. The principle consists in using ...

2004

Chemical beam deposition of titanium dioxide thin films

Giacomo Benvenuti

Titanium dioxide (TiO2) is a widely investigated material for its biological compatibility, high dielectric constant and refractive index, chemical and mechanical resistance, and catalytic activity. Several different techniques are available to produce TiO ...

EPFL2003

Jones vector imaging by use of digital holography: Simulation results

Christian Depeursinge, Tristan Colomb, Etienne Cuche

We present a method to image Jones vector by use of digital holography. We show that with unique hologram acquisition, our method permits to image and to calculate Jones vector and therefore polarization parameters. The idea is to use two reference waves p ...

SPIE2003

In-situ monitoring of GaN growth by hydride vapor phase epitaxy

Jean-François Carlin, Marc Ilegems, Denis Martin

In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the repla ...

2002

Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry

Nicolas Grandjean

Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive in ...

2000

Temperature dependence of hexagonal-GaN optical properties below the bandgap

Nicolas Grandjean

First, spectroscopic ellipsometry (SE) is carried out at 300 K together with reflectivity measurements versus temperature from 4 to 300 K, in order to determine the temperature dependence of the refractive index of h-GaN films in the transparent region (35 ...

1999

GaN evaporation in molecular-beam epitaxy environment

Nicolas Grandjean

GaN(0001) thick layers were grown on c-plane sapphire substrates by molecular-beam epitaxy using NH3. The evaporation of such GaN layers in vacuum was studied as a function of substrate temperature. In situ laser reflectivity was used to quantitatively mea ...

1999

Analysis of phase measurements in combined interferometer and polarimeter systems

Roland Behn

Combined interferometer and polarimeter systems, using a single detecting element per line of sight, are susceptible to perturbation of the interferometric phase when modulation of the polarization vector is applied. This issue has been investigated extens ...

1998

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