Publications associées à Liaison pendante

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Charge transition levels of the As-As dimer and the Ga dangling bond at GaAs/Al2O3 interfaces are determined through density-functional calculations. The same parent interface model structure is used as a starting point for creating both defects providing ...

Elsevier2014

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

Christophe Ballif, Franz-Josef Haug, Jan-Willem Alexander Schüttauf, Matthieu Despeisse, Michael Elias Stückelberger, Yannick Samuel Riesen

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light so ...

American Institute of Physics2014

The O-As defect in GaAs: A hybrid density functional study

Alfredo Pasquarello, Davide Colleoni

The O center substitutional to As (O-As) is addressed through hybrid functional calculations as a candidate defect to explain the Fermi-level pinning in oxygen-doped GaAs. The defect center shows amphoteric behavior which could lead to Fermi-level pinning. ...

Elsevier2014

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect ...

Institute of Physics2014

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Christophe Ballif, Antoine Descoeudres, Stefaan De Wolf

Silicon heterojunction solar cells are crystalline silicon-based devices in which thin amorphous silicon layers deposited on the wafer surfaces serve as passivated, carrier-selective contacts. The success of this technology is attributable to the ability o ...

Elsevier Academic Press Inc2014

Static Dielectric Permittivity of Ice from First Principles

Nicola Marzari, Nicéphore Arthur François Bonnet

The static permittivity of ice is computed from first principles as a function of the electric field, together with the generalized Kirkwood factor. The molecular dipole in ice is unambiguously obtained by an original method combining a slab approach and B ...

Amer Physical Soc2014

Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

Alfredo Pasquarello, Davide Colleoni

The (As-Ga)(2)-O-As defect in oxygen-doped GaAs, consisting of two As antisites neighboring an O center substitutional to As, is addressed through hybrid functional calculations. This defect not only accounts for the nearest neighbor environment of the O a ...

American Institute of Physics2013

Electron hopping at the Si(111):B-root 3 surface: Insight from local impurity spectroscopy

Cédric Tournier-Colletta

Boron vacancies at the Si( 111):B-root 3 surface are model systems in the comprehension of strongly correlated semiconductor surfaces. By using scanning tunneling spectroscopy, the origin of the single-vacancy electronic structure is addressed. It is shown ...

American Physical Society2013

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Charge transition levels of the As-As dimer defect at the InGaAs/Al2O3 interface are determined through density-functional calculations. At variance with the GaAs/Al2O3 interface where this defect gives rise to states within the band gap, its defect levels ...

Elsevier2013

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Liaison pendante

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

Local band bending and grain-to-grain interaction induced strain nonuniformity in polycrystalline CdTe films

The O-As defect in GaAs: A hybrid density functional study

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Static Dielectric Permittivity of Ice from First Principles

Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

Electron hopping at the Si(111):B-root 3 surface: Insight from local impurity spectroscopy

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Graph Chatbot

Chattez avec Graph Search

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Electron hopping at the Si(111):B-root 3 surface: Insight from local impurity spectroscopy

Local band bending and grain-to-grain interaction induced strain nonuniformity in polycrystalline CdTe films

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

Static Dielectric Permittivity of Ice from First Principles

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

The O-As defect in GaAs: A hybrid density functional study

Origin of Fermi-level pinning at GaAs surfaces and interfaces