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Publications associées (97)

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

Amer Chemical Soc2016

Light-induced performance increase of silicon heterojunction solar cells

Christophe Ballif, Antoine Descoeudres, Jacques Levrat, Gabriel Christmann, Matthieu Despeisse, Stefaan De Wolf, Sylvain Nicolay, Eiji Kobayashi

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either ...

American Institute of Physics2016

Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics

Michael Elias Stückelberger, Gizem Nogay

While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostruct ...

Amer Chemical Soc2016

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Using density functional calculations, we study a set of candidate defects for Fermi-level pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and interfacial defects, including As antisites, Ga and As dangling bonds, th ...

American Physical Society2015

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Interfacial Ga-As suboxide: Structural and electronic properties

Alfredo Pasquarello, Davide Colleoni

The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under con ...

American Institute of Physics2015

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

An arsenic related defect at the In0.53Ga0.47As/oxide interface is studied through density functional theory. This defect corresponds to an As-As timer which transforms into two doubly occupied As dangling bonds upon capture of two electrons. The defect ch ...

Elsevier2015

Wire-sawing processes: parametrical study and modeling

Christophe Ballif, Mathijs Pieter van der Meer, Adrien Bidiville

Reducing the wafer breakage rate without changing the wafer thickness and sawing thinner wafers while maintaining constant breakage rate are two possibilities to decrease the costs of solar cells. They are similar in the sense that both require stronger wa ...

Elsevier2015

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Mihai Adrian Ionescu, Sara Rigante

The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surfac ...

2015

Polaron response dominated multiferroic property in 12R-type hexagonal Ba(Ti1/3Mn2/3)O3-delta ceramics

Xiankui Wei

We report the multiferroic properties of 12R-type hexagonal Ba(Ti1/3Mn2/3)O3-delta found in Mn-doped BaTiO3 series samples. Hysteresis measurements reveal the coexistence of weak ferromagnetism and ferroelectricity at room temperature. Furthermore, frequen ...

Amer Inst Physics2015

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