Concept

History of the transistor

Publications associées (366)

A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge

Edoardo Charbon, Scott Anthony Lindner, Martin Wolf

We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...

2017

Emerging Technologies for Computing

Giovanni De Micheli

The evolution of computing has lead to very different realizations to cope with performance and energy consumption density, two competing factors that are not obvious to reconcile. The current semiconductor technologies, mainly FinFETs and FDSoI, provide u ...

2017

Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

Andras Kis, Dmitry Ovchinnikov, Dmitrii Unuchek, Hokwon Kim, Davide Deiana

Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...

American Chemical Society2017

Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve

Jürgen Brugger, Shenqi Xie, Valentin Flauraud

To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation dens ...

Amer Chemical Soc2017

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Sandip De

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, seconda ...

A V S Amer Inst Physics2017

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

Jürgen Brugger, Henrik Moodysson Rønnow, Giovanni Boero, Ivica Zivkovic, Jens Anders, Alessandro Valentino Matheoud, Gabriele Gualco

We report on the design and characterization of single-chip electron spin resonance (ESR) detectors operating at 50 GHz, 92 GHz, and 146 GHz. The core of the single-chip ESR detectors is an integrated LC-oscillator, formed by a single turn aluminum planar ...

Academic Press Inc Elsevier Science2017

Parallel FPGA routing: Survey and challenges

Mirjana Stojilovic

As transistor scaling is slowing down [1], other opportunities for ensuring continuous performance increase have to be explored. Field programmable gate arrays (FPGAs) are in the spotlight these days: not only due to their malleability and energy efficienc ...

2017

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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