Concept
Procédé planar
Publications associées (42)
Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection
Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...
EPFL2024Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity
Matteo Galli, Marco Clementi, Thanavorn Poempool
Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...
Melville2024In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics
Matteo Cucchi, Eleni Stavrinidou
Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...
WILEY-V C H VERLAG GMBH2023Kilowatt-range Picosecond Switching Based on Microplasma Devices
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari
Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...
2021Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography
Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky
We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...
AMER CHEMICAL SOC2021Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
Sylvain Dunand, Matthew James Large
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety ...
2021A round Robin-Highliting on the passivating contact technology
Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Aditya Chaudhary
The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 f ...
EDP SCIENCES S A2021Plasma-enhanced atomic layer deposition of nickel nanotubes with low resistivity and coherent magnetization dynamics for 3D spintronics
Anna Fontcuberta i Morral, Dirk Grundler, Julien Gay, Simon Robert Escobar Steinvall, Maria Carmen Giordano
We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The optimized ALD pul ...
2020Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices
Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...
EPFL2020