EKV MOSFET model

Résumé

The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design. It was developed by Christian C. Enz, François Krummenacher and Eric A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s. Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design. See also

Transistor models
MOSFET
Ngspice
SPICE

Source officielle

https://en.wikipedia.org/wiki/EKV_MOSFET_model

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Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

Francesco Chicco, Christian Enz, Alessandro Pezzotta

Institute of Electrical and Electronics Engineers2017

Chargement

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Federico Faccio, Farzan Jazaeri, Chunmin Zhang

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. We introduce a semiempirical physics-based approach using only three parameters to model the parallel parasitic and total drain leakage current as a function of TID. Taking into account the gate independence of the drain leakage current at high TID levels, we model the lateral parasitic device as a gateless charge-controlled device by using the simplified charge-based Enz-Krummenaker-Vittoz (EKV) MOSFET model. This approach enables us to extract the equivalent density of trapped charges related to the shallow trench isolation oxides. The adopted simplified EKV MOSFET model indicates the weak inversion operation of the lateral parasitic devices.

2018

Chargement

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Claudio Bruschini, Christian Enz, Farzan Jazaeri, Alessandro Pezzotta, Chunmin Zhang

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. The latter are extracted from the measured transfer characteristics at each TID. Despite the very few parameters, both the simplified large- and small-signal models present an excellent match with measurements at all levels of TID. The impacts of TID on essential parameters, including the drain leakage current, the threshold voltage, the slope factor, and the specific current, are then evaluated. Finally, TID effects on the transconductance Gm, the output conductance Gds, the intrinsic gain Gm/Gds and the transconductance efficiency Gm/ID are investigated.

2017

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