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High-voltage and high-power devices are indispensablein spacecraftfor outer space explorations, whose operations require aerospace materialswith adequate vacuum surface insulation performance. Despite persistentattempts to fabricate such materials, current ...
AMER CHEMICAL SOC2023
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Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...
PERGAMON-ELSEVIER SCIENCE LTD2022
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Mixed-halide perovskites are highly promising materials for tandem solar cells. The phenomenon of phase segregation, however hinders their application. Here, we combine Fourier-Transform photocurrent spectroscopy with photoluminescence and current density- ...
Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- ...
Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...
2023
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...
We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...
IOP PUBLISHING LTD2021
Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on ...
IEEE2021
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Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...