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We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
We have used variable-temperature scanning tunneling microscopy to study the aggregation of two-dimensional Ag clusters on Pt(111). A transition from randomly ramified to dendritic fractal growth is observed in the diffusion-limited regime. Atomic-scale ob ...
A model for predicting the liq. phase mass transfer coeff., kL, for the Sulzer structured packing Mellapak 250.Y and 500.Y was proposed. Exptl. data were considered together with the penetration theory. The value of kL increased with the liq. and gas flow ...
High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitt ...
It was recently suggested, basing on the analysis of a wide range of macroscopic experimental results([1-4]), that fatigue in ferroelectric thin film capacitors, particularly in the case of PZT with metallic electrodes (Pt), must be related to the freezing ...
We consider a single-band approximation to the random Schr6dinger operator in an external magnetic field. The random potential consists of delta functions of random strengths situated on the sites of a regular two-dimensional lattice. We characterize the e ...
Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias , which can be interpreted by taking ...
In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...
We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
