The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...
The Tokamak a` Configuration Variable (TCV) coil converters are fed, during the plasma pulse, by a flywheel generator (FG) providing the AC voltages few seconds before the plasma pulse. The synchronization with the 120 Hz frequency delivered by the FG, var ...
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In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...
The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...
Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...
With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...
In spite of the dominance of ac technology for the vast majority of power transmission and distributionsince the late 19th century, the past decades have seen an increase in use of dc electrical power. Inparticular, this has been the case both in high volt ...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
The latest standard "New Dual" power module has been developed for both silicon and silicon-carbide devices to meet the increasing demands in high reliability and high temperature power electronic applications. Due to the new package is just starting to re ...
The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...