Publications associées à Nonvolatile BIOS memory

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Copper TSV-Based Process Development for Die-Level Homogeneous and Heterogeneous 3D Integration Platform

Seniz Esra Küçük

Research and development efforts on chip and wafer-scale 3D integration for system miniaturization have been continuing for more than a decade. However, there are still only a handful of 3D integrated products available in the market due to the high cost a ...

EPFL2017

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Large-scale neural networks implemented with nonvolatile memory as the synaptic weight element: comparative performance analysis (accuracy, speed, and power)

Yusuf Leblebici, Severin Sidler, Irem Boybat Kara, Carmelo Di Nolfo

We review our work towards achieving competitive performance (classification accuracies) for on chip machine learning (ML) of large scale artificial neural networks (ANN) using Non-Volatile Memory (NVM) based synapses, despite the inherent random and deter ...

2015

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Roman Gysel, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008