Publications associées à Arséniure de gallium-indium

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapo ...

American Institute of Physics2013

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Johann Michler, Jacques Giovanola, Jean-Daniel Ganière, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

Systems and devices in a 30 GHz silicon-on-insulator platform

Christophe Marcel Georges Galland, Zhang Yi

We present a 30 GHz silicon photonic platform that includes low-loss passive components, high-speed modulators and Ge-on-Si photodetectors. The platform is available to the community as part of the OpSIS-IME multi-project-wafer foundry service. We conclude ...

Institution of Engineering and Technology2013

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Philippe Buffat, Benjamin Dwir, Elena Suvorova Buffat

Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or st ...

Elsevier Science Bv2013

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Alberto Casadei, Martin Heiss, Carlo Colombo

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

American Institute of Physics2013

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Hua Zhang, Gwénolé Jean Jacopin

We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visibl ...

American Institute of Physics2013

Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

Johann Michler, Jacques Giovanola, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. The first paper (part I) focuses on in situ nanoindentation within a scanning electron microscope (SEM) and on fractographic observatio ...

Cambridge University Press2013

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Sonia Conesa Boj, Pierre Michel Corfdir, Emanuele Uccelli

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

Amer Chemical Soc2013

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Arséniure de gallium-indium

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Systems and devices in a 30 GHz silicon-on-insulator platform

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Method and arrangement for measuring the distance to an object

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Graph Chatbot

Chattez avec Graph Search

Method and arrangement for measuring the distance to an object

Systems and devices in a 30 GHz silicon-on-insulator platform

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer