Concept

Émission thermoionique

Publications associées (70)

Radiative cooling of carbon cluster anions C-2n+1(-) (n=3-5)

Radiative cooling of carbon cluster anions C(2n+1)(-)C2n+1- (n = 3-5) is investigated using the cryogenic electrostatic ion storage ring DESIREE. Two different strategies are applied to infer infrared emission on slow (milliseconds to seconds) and ultraslo ...

SPRINGER2020

Characterization of a time-resolved electron microscope with a Schottky field emission gun

Marcel Drabbels, Ulrich Lorenz, Pavel Olshin

The rapid growth of the field of time-resolved and ultrafast electron microscopy has been accompanied by the active development of new instrumentation. Recently, time-resolved microscopes equipped with a field emission gun have been introduced, demonstrati ...

2020

Intense microsecond electron pulses from a Schottky emitter

Marcel Drabbels, Ulrich Lorenz, Pavel Olshin, Gabriele Bongiovanni

Thanks to their high brightness, field emitters are the electron sources of choice in most high-end electron microscopes. Under typical operating conditions, the available emission current from these emitters is largely limited by practical considerations, ...

2020

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Sofia Libraro, Frank Meyer

We investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallisation in solar c ...

2019

Elucidation of photovoltage origin and charge transport in Cu2O heterojunctions for solar energy conversion

Jingshan Luo, Matthew Thomas Mayer

Heterojunctions between p-type cuprous oxide (Cu2O) and suitable n-type layers stand out as some of the best performing and abundant oxide photoabsorbers currently available for the generation of hydrogen with photoelectrochemical cells or conversion of so ...

2019

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Klaus Kern, Marko Burghard

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

AMER CHEMICAL SOC2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation ele ...

IEEE2018

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