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The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on ...
A series of events has revolutionized the research on semiconductor interfaces. One of the most interesting is the discovery that heterojunction band lineups can be modified by manipulating the interface on an atomic scale. Specifically, it has been possib ...
The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process inv ...
We explore the formation of Schottky barriers by adsorption of Ge overlayers onto single crystal Ni and Ag substrates. The results are compared to earlier results from Si-on-metal systems as well as interfaces formed by the metal-on-semiconductor depositio ...
The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has be ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
Photoelectron-spectromicroscopy experiments unexpectedly revealed a reacted phase for Ge overlayers on GaSe. This finding is in sharp contrast with the notion that this interface is an ideal Schottky system, whose band discontinuities, for example, are det ...
Three new progressions consisting of broad bands were obsd. in the absorption spectrum of NO in solid Ar. They are identified as the mol. Rydberg A 2.sum.+,C 2P and D 2.sum.+-X 2P (v', 0) transitions, blue shifted with respect to the gas phase by .apprx.0. ...
We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridati ...
Photoemission spectromicroscopy data on Si-GaSe with 0.2 mu m lateral resolution revealed laterally inhomogeneous interface Se-Si chemical reactions. The local Si 2p fits agrees with interface Si selenide parameters; the Se 3d peaks indicate a Si-selenide ...
