Publications associées à Câblage par fil

Integrated Wireless Power, Data Communication, and Thermal Sensing System for Autonomous Multisite Brain Implants

Implanted medical devices (IMDs) have been widely developed to support the monitoring and recording of biological data inside the body or brain. Wirelessly powered IMDs, a subset of implantable electronics, have been proposed to eliminate the limitations r ...

EPFL2024

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Control of intermetallics in the interface in directed energy deposition of titanium on stainless steel 316L

Di Cui

Application of a single metal or alloy is often restricted by its properties from optimal combination of performance and cost. Therefore, there is a vast need of joining dissimilar metals for various applications in biomedical, aerospace, automobile and ma ...

EPFL2023

Full System Exploration of On-Chip Wireless Communication on Many-Core Architectures

David Atienza Alonso, Marina Zapater Sancho, Giovanni Ansaloni, Rafael Medina Morillas, Yasir Mahmood Qureshi, Joshua Alexander Harrison Klein

In order to develop sustainable and more powerful information technology (IT) infrastructures, the challenges posed by the "memory wall" are critical for the design of high-performance and high-efficiency many-core computing systems. In this context, recen ...

IEEE2022

Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test

Yi Zhang, Rui Wu

The latest standard "New Dual" power module has been developed for both silicon and silicon-carbide devices to meet the increasing demands in high reliability and high temperature power electronic applications. Due to the new package is just starting to re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

Benjamin Aaron Helfrecht, Alejandro Strachan

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconn ...

AMER INST PHYSICS2020

Two-Element Antenna-Active Phase Shifter Packaging at 77 GHz

Anja Skrivervik, Efe Öztürk

This work presents a low cost and wire-bonded active phase shifter chip to RF circuitry on PCB board packaging for implementing a two-element phased array antenna at 77 GHz. The 1.5 mm × 1.1 mm chip is embedded in RO3003 PCB board and its GSG ports are wir ...

IEEE2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Physical Design Considerations of One-level RRAM-based Routing Multiplexers

Giovanni De Micheli, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon, Edouard Giacomin

Resistive Random Access Memory (RRAM) technology opens the opportunity for granting both high-performance and low- power features to routing multiplexers. In this paper, we study the physical design considerations related to RRAM- based routing mult ...

ACM2017

Copper TSV-Based Die-Level Via-Last 3D Integration Process with Parylene-C Adhesive Bonding Technique

Yusuf Leblebici, Seniz Esra Küçük

This paper presents a die-level post-CMOS processing protocol for multi-layer homogeneous 3D integration with adhesive bonding technique using parylene-C as an intermediate bonding layer and sidewall passivation material. This protocol was used to fabricat ...

2016