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Diélectrique high-k

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Diélectrique high-k

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Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Process-induced skew variation for scaled 2-D and 3-D ICs

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Process-induced skew variation for scaled 2-D and 3-D ICs

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms