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Publications associées (334)

Performance of Piezoelectric MEMS Microphones

This semester project deals with the study of at fully clamped plates with various geome- tries (circular and square), piezoelectric properties and uniformly distributed load (normal to the surface). The stress distribution is analyzed in order to obtain a ...

2018

A single chip electron spin resonance detector based on a single high electron mobility transistor

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magne ...

2018

"Impossibile da calcolare!" Il cantiere della buvette di Évian-les-Bains, fra intuizione creativa e rigore intellettuale (M.Novarina, J.Prouvé, S.Ketoff, 1955-57)

Giulia Marino

Precision mechanics: the buvette (pump room) of Évian-les-Bains is not just an architecture of great formal elegance, but above all an extraordinary technological object, a machine carefully calibrated, in equilibrium. Architectural criticism has largely d ...

Cuzzolin editore2018

Quantifying and Modeling the Impact of Interconnection Failures on the Electrical Performance of Crystalline Silicon Photovoltaic Modules

Christophe Ballif, Antonin Faes, Jacques Levrat, Alessandro Francesco Aldo Virtuani, Matthieu Despeisse, Eleonora Annigoni

We present an electrical model developed with LT SPICE that simulates the performance of a string of cells with disconnections in the electrical circuit. In a previous contribution, we quantified experimentally how the module performance is affected when o ...

IEEE2018

Analytic stability criteria for edge MHD oscillations in high performance ELM free tokamak regimes

Jonathan Graves, Wilfred Anthony Cooper, Daniele Brunetti, Alberto Mariani

A new dispersion relation, and associated stability criteria, is derived for low-n external kink and infernal modes, and is applied to modelling the stability properties of quiescent H-mode like regimes. The analysis, performed in toroidal geometry with la ...

IAEA2018

Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment

Alain Yuji Takabayashi

In this work, we analyze the effect of CF4/O-2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O-2 plasma treatment is evaluated usin ...

PERGAMON-ELSEVIER SCIENCE LTD2018

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920 ...

2018

Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

Jürgen Brugger, Henrik Moodysson Rønnow, Giovanni Boero, Ivica Zivkovic, Jens Anders, Alessandro Valentino Matheoud, Gabriele Gualco

We report on the design and characterization of single-chip electron spin resonance (ESR) detectors operating at 50 GHz, 92 GHz, and 146 GHz. The core of the single-chip ESR detectors is an integrated LC-oscillator, formed by a single turn aluminum planar ...

Academic Press Inc Elsevier Science2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Tomas Sluka, Pavel Mokry

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensiona ...

Royal Soc Chemistry2017

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