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Publications associées (334)

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

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Particle accelerators foresee the use of Nb3Sn in the next generation of dipole magnets. A common design strategy is to grade the coil, i.e., to optimize the quantity of superconductor in the turns with respect to the magnetic field intensity. As a consequ ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Co-Wound Superconducting Wire for Quench Detection in Fusion Magnets

Pierluigi Bruzzone, Kamil Sedlák, Davide Uglietti, Nikolay Bykovskiy

High temperature superconducting (HTS) materials are widely utilized in various design proposals for fusion magnets, resulting in enhanced performance of the machines compared to the past. However, a reliable quench detection in HTS conductors remains an o ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Lock-in amplified differential phase contrast

Christophe Moser, Timothé Laforest, Damien Claude-Marie Loterie, Chiara Bonati

We introduce a lock-in method to increase the phase contrast in incoherent Differential Phase Contrast (DPC) imaging. The use of a smart pixel detector with in-pixel signal demodulation, paired with synchronized illumination, provides the basis of a bit-ef ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Balancing high-speed rotors at low speed using optimized parametric excitation and tuned nonlinear feedback

Amit Yedidia Dolev

The paper presents an improved slow-speed mass balancing procedure capable of reducing high-speed related imbalance. Parametric excitation is used to project the small imbalance forces onto a chosen mode of vibration, corresponding to a high critical rotat ...

PERGAMON-ELSEVIER SCIENCE LTD2022

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