Publications associées à Write amplification

One-shot Garbage Collection for In-memory OLTP through Temporality-aware Version Storage

Anastasia Ailamaki, Syed Mohammad Aunn Raza, Periklis Chrysogelos, Angelos Christos Anadiotis

Most modern in-memory online transaction processing (OLTP) engines rely on multi-version concurrency control (MVCC) to provide data consistency guarantees in the presence of conflicting data accesses. MVCC improves concurrency by generating a new version o ...

ACM2023

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Tom Theodorus Antonius Lummen, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Shikhar Tuli

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

Thermal scanning probe lithography-a review

Jürgen Brugger, Samuel Tobias Howell

Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with many unique properties which enable original or improved nano-patterning in appl ...

2020

RetroWrite: Statically Instrumenting COTS Binaries for Fuzzing and Sanitization

Mathias Josef Payer, Duo Xu

Analyzing the security of closed source binaries is currently impractical for end-users, or even developers who rely on third-party libraries. Such analysis relies on automatic vulnerability discovery techniques, most notably fuzzing with sanitizers enable ...

IEEE COMPUTER SOC2020

Design Guidelines for High-Performance SCM Hierarchies

Babak Falsafi, Edouard Bugnion, Alexandros Daglis, Javier Picorel Obando, Mark Johnathon Sutherland, Dmitrii Ustiugov, Dionysios Pnevmatikatos

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a fewfactors of DRAM. Nevertheless, the latency-sensitive nature of memory-residen ...

ACM2018

TRIAD: creating synergies between memory, disk and log in log structured key-value stores

Rachid Guerraoui, Willy Zwaenepoel, Diego Didona, Oana Maria Balmau

We present TRIAD, a new persistent key-value (KV) store based on Log-Structured Merge (LSM) trees. TRIAD improves LSM KV throughput by reducing the write amplification arising in the maintenance of the LSM tree structure. Although occurring in the backgrou ...

2017

Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols

James Richard Larus, Nachshon Cohen

Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many applications of NVM ...

ACM2017

Endurance Management for Resistive Logic-In-Memory Computing Architectures

Giovanni De Micheli, Mathias Soeken, Pierre-Emmanuel Julien Marc Gaillardon

Resistive Random Access Memory (RRAM) is a promising non-volatile memory technology which enables modern in-memory computing architectures. Although RRAMs are known to be superior to conventional memories in many aspects, they suffer from a low writ ...

Ieee2017

Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3

Helmuth Berger

Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write informa ...

Amer Inst Physics2016