Interface de programmation

Résumé

thumb|Démonstration d'une routine appelant une base de données dans une interface de programmation. En informatique, une interface de programmation d’application ou interface de programmation applicative, souvent désignée par le terme API pour « application programming interface », est un ensemble normalisé de classes, de méthodes, de fonctions et de constantes qui sert de façade par laquelle un logiciel offre des services à d'autres logiciels. Elle est offerte par une bibliothèque logicielle ou un service web, le plus souvent accompagnée d'une description qui spécifie comment des programmes « consommateurs » peuvent se servir des fonctionnalités du programme « fournisseur ». On parle d'API à partir du moment où une entité informatique cherche à agir avec ou sur un système tiers et que cette interaction se fait de manière normalisée en respectant les contraintes d'accès définies par le système tiers. On dit alors que le système tiers « expose une API ». À ce titre, des interactions a

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User oriented query language for MPEG-7 and MPEG-7 API.

Nastaran Fatemi

We propose to represent the "basic behaviors" of MPEG-7 description tools as a set of constructor, operator and function signatures. This way of making explicit the behavior of datatypes using function signatures is commonly used to formalize data models.A major advantage of this proposal is that, based on signatures, functions can be implemented using different algorithms and technologies, which could be considered as an MPEG-7 API. It?s important to note that the specification of signatures and their description is application independent. It therefore respects one of the major features of MPEG-7, which is "application independency". Implementations of the functions? cores are clearly out of the scope of the standard. Inevitably, the use of an MPEG-7 API makes building MPEG-7 applications easier and more effective as developers would not be totally dependent on the understanding of the MPEG-7 semantics and examples part.

2003

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Application de l'électro-osmose et de l'électromigration à l'extraction de polluants organiques et inorganiques de sols pollués

EPFL1998

Chargement

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emphasize the possible relationship between interface states and the formation of the Schottky barrier. We aim at understanding the atomic-scale mechanisms responsible for interface states as well as their role in the Schottky barrier formation process. At As-terminated Al/GaAs(001) and Al/AlAs(001) junctions, resonant and localized interface states occur at the J point of the interface 2D Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between the outermost cation atoms of the semiconductor and the interfacial Al atoms of the metal. These interface states derive from an interaction between localized states of the Al(001) surface and semiconductor conduction band states, mediated by localized states of the unreconstructed, As-terminated semiconductor (001) surface. Our results indicate that interface states of the intermetallic, bonding-like kind could play an important role in the transport properties of metal/AlxGa1-xAs junctions. We have also investigated the electronic structure of Al, Au and Cu junctions to cubic, N-terminated GaN(001). The localized interface state reported for As-terminated Al/GaAs(001) and Al/AlAs(001) junctions occurs also at metal/GaN interfaces under the condition that atoms on the outermost atomic plane of the metal are placed in front of the outermost semiconductor cation. This indicates that the formation mechanism of this state is a very general one. In contrast to Al/AlxGa1-xAs junctions, these states occur at energy much larger than EF for the contacts to GaN. Thus, they are not expected to contribute significantly to the electronic transport of the latter interfaces. However, a large number of interface states attributed to d-type orbitals occur over a wide energy range including EF at contacts of noble metals to GaN.

EPFL2003

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EPFL2003