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A review, with 9 refs., is given on trace element anal. by mass spectrometry (MS) and potentiometric stripping anal. (PSA). The key question of the problem is detn. of the structure of the samples (i.e. distribution functions and concns. of atoms, mols., c ...
The diffusion of Mn, Cr, and Ti in single crystalline copper was investigated in the temperature range between 582 and 800 K, 639 and 829 It and 621 and 747 K, respectively. Ion beam sputtering in combination with secondary ion mass spectrometry (SIMS) was ...
Ammonia has been used to grow GaN layers by molecular beam epitaxy on c-plane sapphire substrates. The ratio of nitrogen to Ga active species, i.e., the actual V/III ratio, has been varied from 1 to 4. It is found that increasing the V/III ratio improves t ...
Electron beam instabilities occurring in a gyrotron electron beam can induce an energy spread which might significantly deteriorate the gyrotron efficiency. Three types of instabilities are considered to explain the important discrepancy found between the ...
We report on the optical response of a semiconductor microcavity featuring a strong exciton-photon coupling. The weak excitation regime is investigated experimentally by means of time-resolved transmission and four-wave mixing experiments. The influence of ...
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...
Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective u ...
Mass selected Ag/sub n/ clusters (n=1,7,19) from a secondary ion source have been deposited onto a Pt(111) substrate at low temperature. The surface and resulting cluster morphology have subsequently been characterized within the same UHV chamber by variab ...
The growth and properties of nanosized silicon particles produced by gas-phase reaction in a low-pressure silane plasma has been studied. In situ ion-mass spectroscopy and Mie scattering measurements were used to monitor the formation of powders. High reso ...
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from ...