Publications associées à Triode (électronique)

A Two-Wired High Input Impedance and High CMRR Active Electrode Insensitive to Component Mismatch

This article proposes a new two-wired amplifying active electrode (AE), presenting a high input impedance and a high common-mode rejection ratio (CMRR). In the proposed structure, the input impedance and the CMRR of the system are considerably increased by ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Frontiers in the Application of RF Vacuum Electronics

Timothy Goodman

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important app ...

2023

Analytic stability criteria for edge MHD oscillations in high performance ELM free tokamak regimes

Jonathan Graves, Wilfred Anthony Cooper, Daniele Brunetti, Alberto Mariani

A new dispersion relation, and associated stability criteria, is derived for low-n external kink and infernal modes, and is applied to modelling the stability properties of quiescent H-mode like regimes. The analysis, performed in toroidal geometry with la ...

IAEA2018

Triode Solid Oxide Fuel Cell Operation Under Sulfur-Poisoning Conditions

Jan Van Herle, Stefan Diethelm, Priscilla Caliandro

The triode solid oxide fuel cell (SOFC) is a three electrodes configuration. The third electrode, so-called auxiliary, is connected in a way to run in electrolysis mode, while cathode and anode operate in normal fuel cell mode. This mixed operation allows ...

Wiley-V C H Verlag Gmbh2017

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

Institute of Electrical and Electronics Engineers2017

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

Generalized radiation boundary conditions in gyrotron oscillator modeling

Stefano Alberti, Minh Quang Tran, Stephan Brunner, Jean-Philippe Hogge, Jérémy Genoud, Trach-Minh Tran

A numerical procedure to implement a frequency-independent generalized non-reflecting radiation boundary conditions, GNRBC, based on the Laplace Transform, is described in details and tested successfully on a simple 2 frequency test problem. In the case of ...

Springer2015

Electrochemical Model of a Triode Solid Oxide Fuel Cell

Jan Van Herle, Stefan Diethelm, Arata Nakajo, Priscilla Caliandro

A Triode Solid Oxide Fuel Cell is a novel cell architecture that consists of two circuits: an auxiliary circuit, operated in electrolysis mode, and a conventional main fuel cell circuit. During triode operation, performance enhancement can be expected espe ...

2015

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Breakdown of High-Performance Monolayer MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of ...

Amer Chemical Soc2012