Publications associées à Détecteur et avertisseur autonome de fumée

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Sylvain Dunand, Nicolas Würsch, Luca Massimiliano Antognini, Jonathan Emanuel Thomet, Matthew James Large

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Distributed Alarm System Based on OTDR Interrogation of Side Air-Hole Fibers

Luc Thévenaz, Yuting Yang, Marcelo Alfonso Soto Hernandez

A distributed sensor for multi-event alarm triggering is demonstrated by measuring the loss change induced by the liquefaction of pressured CO2 trapped along a side air-hole fiber. ...

2023

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

Edoardo Charbon, Emanuele Ripiccini, Ming-Lo Wu, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Kazuhiro Morimoto, Carlo Alberto Fenoglio

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is ...

MDPI2022

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

High intensity x-ray interaction with a model bio-molecule system: double-core-hole states and fragmentation of formamide

Christoph Bostedt, Yiming Li

Formamide, a simple model bio-molecule (HCONH2), is irradiated with high intensity, ultrashort pulses from an x-ray free electron laser. Ionic fragments resulting from photoionization and subsequent decay processes are recorded, as well as the electronic s ...

IOP Publishing2020

Humidity Sensors for High Energy Physics Applications: A Review

Sandro Carrara, Andromachi Tsirou, Amar Kapic

Modern silicon-based detectors for high-energy physics operate in an experimental environment with sub-zero temperatures. At those temperatures, even low traces of humidity will produce vapor condensation with damages to the detectors. Monitoring relative ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Experimental and numerical study of stochastic branching noise in nuclear reactors

Oskari Ville Pakari

Noise analysis applied to nuclear reactor physics is a powerful tool to investigate a reactor's kinetic parameters, and more generally underlying physical processes determining core behavior. The kinetic parameters are the coefficients of simplified time-d ...

EPFL2020

A von Hamos spectrometer for in situ sulfur speciation by non-resonant sulfur K alpha emission spectroscopy

Dominik Kinschel

A von Hamos geometry based wavelength dispersive spectrometer combined with an in situ reactor cell has been developed to measure non-resonant sulfur K alpha emission for the in situ speciation of low concentrations of sulfur. The spectrometer operates at ...

2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018