Publications associées à Coïncidence (informatique)

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Andras Kis, Oleg Yazyev, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Victor Allain, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

Semiconductor tunneling device

Mihai Adrian Ionescu, Luca De Michielis, Cem Alper, Livio Lattanzio, Nilay Dagtekin

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Sandeep Miryala

As an answer to the new electronics market demands, semiconductor industry is looking for different materials, new process technologies and alternative design solutions that can support Silicon replacement in the VLSI domain. The recent introduction of gra ...

ACM2015

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

Multiple Independent Gate FETs: How Many Gates Do We Need?

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Subhasish Mitra

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent sw ...

IEEE2015

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) t ...

2015

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Mihai Adrian Ionescu, Arnaud Magrez, Clara-Fausta Moldovan, Julien Perruisseau-Carrier, Santiago Capdevila Cascante, Laurent Syavoch Bernard

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at terahertz and mid-infrared frequencies. However, the requirement of a gating electrode close to graphene and the single 'control knob ...

Nature Publishing Group2015

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Jian Zhang

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

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Coïncidence (informatique)

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Semiconductor tunneling device

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Role of the gate in ballistic nanowire SOI MOSFETs

Multiple Independent Gate FETs: How Many Gates Do We Need?

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Polarity Control at Runtime

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Graph Chatbot

Chattez avec Graph Search

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Semiconductor tunneling device

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Role of the gate in ballistic nanowire SOI MOSFETs

Multiple Independent Gate FETs: How Many Gates Do We Need?

Polarity Control at Runtime

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs