Concept

Two-dimensional electron gas

Publications associées (296)

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

2017

Strain-induced polar discontinuities in two-dimensional materials from combined first-principles and Schrodinger-Poisson simulations

Giovanni Pizzi, Marco Gibertini, Augustin Bussy

The local application of mechanical stress in piezoelectric materials gives rise to boundaries across which the electric polarization changes. Polarization charges appear along such polar discontinuities and the ensuing electric fields drive a charge recon ...

Amer Physical Soc2017

Spin transport in topological insulator-based nanostructures

Kristina Vaklinova

With the advent of spintronics, significant research effort is made to realize efficient injection, transport, manipulation, and detection of spin. The material platforms and device architectures suitable for this purpose 3D topological insulators (TIs) ar ...

EPFL2017

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

Artem Pulkin

The thesis describes the computational study of structural, electonic and transport properties of monolayer transition metal dichalcogenides (TMDs) in the stable 2H and the metastable 1T' phases. Several aspects have been covered by the study including the ...

EPFL2017

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Incorporation of Counter Ions in Organic Molecules: New Strategy in Developing Dopant-Free Hole Transport Materials for Efficient Mixed-Ion Perovskite Solar Cells

Nikolaos Vlachopoulos, Ulf Anders Hagfeldt, Lin Yang, Jiahuan Zhang, Monica Marcela Lira Cantu, Liang Wang

Hole transport matertial (HTM) as charge selective layer in perovskite solar cells (PSCs) plays an important role in achieving high power conversion efficiency (PCE). It is known that the dopants and additives are necessary in the HTM in order to improve t ...

Wiley-V C H Verlag Gmbh2017

Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers

Klaus Kern, Marko Burghard, Alexander Ronald Hoyer

Raman scattering is a powerful tool for investigating the vibrational properties of two-dimensional materials. Unlike the 2H phase of many transition metal dichalcogenides, the 1T phase of TiSe2 features a Raman-active shearing and breathing mode, both of ...

Amer Chemical Soc2017

Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions

Klaus Kern, Marko Burghard

Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing a ...

Amer Chemical Soc2017

Photocurrent Spectroscopy of Perovskite Layers and Solar Cells: A Sensitive Probe of Material Degradation

Christophe Ballif, Stefaan De Wolf, Björn Niesen, Jérémie Werner, Jakub Holovsky, Philipp Friedrich Hermann Löper, Martin Ledinsky, Martin Müller

Optical absorptance spectroscopy of polycrystalline CH3NH3PbI3 films usually indicates the presence of a PbI2 phase, either as a preparation residue or due to film degradation, but gives no insight on how this may affect electrical properties. Here, we app ...

Amer Chemical Soc2017

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Andras Kis, Oleg Yazyev, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Victor Allain, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

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