Concept
Contact ohmique
Publications associées (244)
Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...
2024Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget
Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, Luca Massimiliano Antognini, Sofia Libraro
This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...
Amsterdam2023New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation
Mohammad Samizadeh Nikooytabalvandani
There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...
EPFL2023Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh
Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...
2022Active load cell with positive, negative and zero stiffness operating modes for micronewton range contact force monitoring in electrical probing
Simon Nessim Henein, Charles Baur, Hubert Pierre-Marie Benoît Schneegans, Michal Stanislaw Smreczak
This article describes a novel method for applying a contact force in the range of 1 to 100 μN with pointed probe on a microscale sample in order to perform ohmic electrical measurements. The solution is based on the new TIVOT active load cell combining th ...
2022SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells
Audrey Marie Isabelle Morisset, Xinya Niu
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022