Publications associées à Fuzz bass

Arvin: Greybox Fuzzing Using Approximate Dynamic CFG Analysis

Fuzzing has emerged as the most broadly used testing technique to discover bugs. Effective fuzzers rely on coverage to prioritize inputs that exercise new program areas. Edge-based code coverage of the Program Under Test (PUT) is the most commonly used cov ...

ASSOC COMPUTING MACHINERY2023

Seed Selection for Successful Fuzzing

Mathias Josef Payer

Mutation-based greybox fuzzing-unquestionably the most widely-used fuzzing technique-relies on a set of non-crashing seed inputs (a corpus) to bootstrap the bug-finding process. When evaluating a fuzzer, common approaches for constructing this corpus inclu ...

ASSOC COMPUTING MACHINERY2021

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

2019

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

IEEE2018

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Francesco Chicco, Alessandro Pezzotta

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

A Row-Column Accessed Dynamic Element Matching DAC Architecture for SAR ADCs

Mustafa Kilic, Selman Ergünay, Yusuf Leblebici

Capacitor mismatch in high resolution Successive Approximation Register (SAR) Analog to Digital Converters (ADCs) causes non-linearity effects that reduce the Spurious-Free Dynamic Range (SFDR). This paper presents a novel dynamic element matching (DEM) te ...

IEEE2018

Hard-sphere displacive model of deformation twinning in hexagonal close-packed metals. Revisiting the case of the (56, a) contraction twins in magnesium

Cyril Cayron

Contraction twinning in magnesium alloys leads to new grains that are misoriented from the parent grain by a rotation (56°, a). The classical shear theory of deformation twinning does not specify the atomic displacements and does not explain why contractio ...

Int Union Crystallography2017

Simple scheme for realizing fast light with low distortion in optical fibers

Luc Thévenaz, Sang Hoon Chin

In a previous paper (Song et al., 2005) we reported the first experimental demonstration of pulse advancement with gain in optical fibers using stimulated Brillouin scattering (SBS). We tested the two methods described above to achieve gain-assisted fast l ...

IEEE2007

Compensation des non-linéarités des systèmes haut-parleurs à pavillon

Delphine Bard

The assumptions of linearity and autonomy assumed in circuit theory are known to be respected only partially by electroacoustic transducers. In particular, the dynamics range of the latter is limited by the audible nonlinear effects that they are causing. ...

EPFL2005