Publications associées à Junction Field Effect Transistor

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

Peng Chen, Xupeng Yang

The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The th ...

NATURE PORTFOLIO2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li, Rui Lu, Heng Fang

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Piscataway2023

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

Andras Kis, Mukesh Kumar Tripathi, Zhe Sun, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon

Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic ef ...

2023

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

Philip Johannes Walter Moll, Matthias Carsten Putzke, Yi-Chiang Sun, Chunyu Guo, Jonas De Jesus Diaz Gomez, Maarten Ruud van Delft, Jacopo Oswald

As conductors in electronic applications shrink, microscopic conduction processes lead to strong deviations from Ohm's law. Depending on the length scales of momentum conserving (l(MC)) and relaxing (l(MR)) electron scattering, and the device size (d), cur ...

NATURE PORTFOLIO2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

2021

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Junction Field Effect Transistor

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Graph Chatbot

Chattez avec Graph Search

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes