Publications associées à Transistor à effet de champ

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Jessy Anthony Ançay

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Davide Campi, Cédric Klinkert

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

Logic-in-memory based on an atomically thin semiconductor

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

Crystallization and Organic Field-Effect Transistor Performance of a Hydrogen-Bonded Quaterthiophene

Rosario Scopelliti, Holger Frauenrath, Philippe Bugnon, Stéphane Suarez, Riccardo Petraglia, Jan Gebers, Piotr De Silva, Bilal Özen

Crystalline thin films of pi-conjugated molecules are relevant as the active layers in organic electronic devices. Therefore, materials with enhanced control over the supramolecular arrangement, crystallinity, and thin-film morphology are desirable. Herein ...

2020

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Didem Dede, Martin George Friedl, Wonjong Kim, Nicholas Paul Morgan

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

Resonant-type power converters are supposed to generate zero switching losses during soft-switching operation. In recent research, unexpected switching losses were reported in these converters, which were attributed to a large-signal hysteresis observed in ...

IEEE2020

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this work, we present the investigation of the combination of p-GaN gate and tri-gate structures to achieve normally-off operation on GaN-on-Si MOSFETs. We have developed and optimized a selective and low-damage p-GaN etching recipe to stop at the AlGaN ...

IEEE2020

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Transistor à effet de champ

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Electrochemical and morphological engineering of 2D materials for nanopore sensing

Logic-in-memory based on an atomically thin semiconductor

Crystallization and Organic Field-Effect Transistor Performance of a Hydrogen-Bonded Quaterthiophene

Remote Doping of Scalable Nanowire Branches

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

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Chattez avec Graph Search

Electrochemical and morphological engineering of 2D materials for nanopore sensing

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Crystallization and Organic Field-Effect Transistor Performance of a Hydrogen-Bonded Quaterthiophene

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Logic-in-memory based on an atomically thin semiconductor

Remote Doping of Scalable Nanowire Branches

Output-Capacitance Hysteresis Losses of Field-Effect Transistors